Comparison ledger
Applied Materials 0010-13622 RF Match for, Applied Materials Centura HTF, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | Centura HTFApplied Materials |
|---|---|---|
| OEM | Applied Materials | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Applied Materials Centura |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | 2x Chambers Poly[2] |
| Model | 0010-13622[1] | CENTURA HTF[3] |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Manufacturer | — | Applied Materials[3] |
| Tool type | — | CVD (Chemical Vapor Deposition)[2] |
| Condition | — | Good[3] |
| Year | — | 2006[3] |
| Chambers | — | 3 chambers[3] |
| Category | — | Other Wafer Production[3] |
| Wafer Size | — | 8"[4] |
| Vintage | — | 2006[4] |
| Description | — | Chamber A: Standard EPI Atmospheric Chamber; Chamber B: Standard EPI Atmospheric Chamber; Chamber C: Standard EPI Atmospheric Chamber[4] |
| Process Gases | — | TCS, PH3, Porr[4] |
| Temperature Control | — | Dual Pyrometer[4] |
| Power Requirements | — | 480 V 240.0 A 50 Hz 3 Phase[4] |
| Process type | — | CVD (Chemical Vapor Deposition)[2] |
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