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Comparison ledger

0010-22161 High EFF RF MatchversusTCP 9400

Applied Materials 0010-22161 High EFF RF Match, Lam Research TCP 9400, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
TCP 9400Lam Research
OEMApplied MaterialsLam Research
Category——
Wafer size——
Process node——
Introduced——
Production run—1996–
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-22161 High EFF RF MatchLam Research TCP 9400
Cited variants—
Specifications
MakeApplied Materials[2]—
Model0010-22161[2]—
DescriptionHTESC PH 1 REV A[3]—
ConditionUsed[3]—
Stock NumberBM6628[3]—
Etch Technology—Transformer Coupled Plasma (TCP)[4]
RF Frequency—13.56 MHz[4]
Number of RF Power Supplies—2[4]
Maximum Etch Depth—3 µm[4]
Primary Materials Etched—Silicon[4]
Other Materials Etched—Silicon Germanium, Germanium[4]
Gases—Chlorine, He/O2, Helium, Hydrogen Bromide, Nitrogen, Oxygen, Perfluoroethane, Tetrafluoromethane[4]
Substrate Sizes (SNF configuration)—4 inch[4]
Substrate Sizes (standard configuration)—8 inch[5]
Maximum Wafer Load—25 wafers[4]
Transport System—Cassette to cassette[1]
Software—Envision version 1.4[1]
Vintage Year—1996[1]
Platform—Rainbow[1]
Vacuum Pump—Leybold TURBOVAC 1000C[1]
Chamber Type—Ceramic free with waferless auto clean (WAC)[1]
Configuration—Single chamber stand-alone[1]
Inductively Coupled Source—TCP 9400 ESC[1]
CE Certified—Yes[1]
Sources (5)Every fact above is drawn from these public sources
  1. [1]photonicmicrodevices.comphotonicmicrodevices.com
  2. [2]Equipment inventory listing
  3. [3]tarasemi.comtarasemi.com
  4. [4]snfguide.stanford.edusnfguide.stanford.edu
  5. [5]Equipment inventory listing