Comparison ledger
Axcelis 200 ACU, Plasma-Therm Versaline ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 ACUAxcelis | Versaline ICPPlasma-Therm |
|---|---|---|
| OEM | Axcelis | Plasma-Therm |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Plasma-Therm Versaline ICP |
| Cited variants | — | |
| Specifications | ||
| Configuration | Parts Machine[2] | 4 Process Modules[6] |
| Manufacturer | Axcelis[2] | — |
| Model | 200 ACU[2] | — |
| Tool type | Asher[2] | — |
| Wafer size | 200mm[4] | — |
| Serial number | AU6A356AH[4] | — |
| Computer system | M 200 PC, M 200[5] | — |
| Part number | SC 4572 A[5] | — |
| Volts | 208[5] | — |
| Amps | 30[5] | — |
| Equipment type | Asher[2] | — |
| Wafer configuration | 8 inch[3] | — |
| RF Power Supply | — | 500 W[7] |
| Wafer Size | — | 4" wafers or smaller samples mounted to 4" carrier wafers[7] |
| Gases Available | — | Cl2, BCl3, Ar, O2[7] |
| ICP Source Frequency | — | 2MHz[1] |
| Substrate Bias Frequency | — | 13.56MHz (optional 40MHz)[1] |
| Substrate Temperature Control | — | Backside helium cooling with mechanical or electrostatic clamping[1] |
| Control System | — | Cortex control system with EndpointWorks[1] |
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