Comparison ledger
Bruker Oltespa, Rorze 03 RR 8120-001-001 Wafer Exchanger, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | OltespaBruker | |
|---|---|---|
| OEM | Bruker | Rorze |
| Category | Test & Probe | Test & Probe |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Bruker Oltespa | Rorze 03 RR 8120-001-001 Wafer Exchanger |
| Specifications | ||
| Category | Test & Probe[1] | — |
| Model | Oltespa[2] | 03 RR 8120-001-001[5] |
| Tool type | Prober[2] | — |
| Probe model | OLTESPA-R4[3] | — |
| Probe geometry | Rectangular[3] | — |
| Tip radius | 7 nm nominal; 10 nm max[3] | — |
| Frequency | 70 kHz nominal; 50-90 kHz range[3] | — |
| Spring constant | 2 N/m nominal; 0.6-3.5 N/m range[3] | — |
| Cantilever length | 240 µm nominal; 225-255 µm range[3] | — |
| Cantilever width | 40 µm nominal; 38-42 µm range[3] | — |
| Cantilever thickness | 2.3 µm nominal; 1.6-3.0 µm range[3] | — |
| Cantilever material | Silicon[3] | — |
| Back-side coating | Reflective Al[3] | — |
| Tip height | 14 µm nominal; 9-19 µm range[3] | — |
| Front angle | 0°[3] | — |
| Back angle | 35°[3] | — |
| Side angle | 18°[3] | — |
| Substrate material | N-type doped silicon; resistivity 0.01-0.02 Ω·cm[4] | — |
| Reflective coating | 100 nm Al on backside[4] | — |
| Wafer size | — | 8 inch[5] |
| Manufacturer | — | Rorze[5] |
| Equipment type | — | Wafer Exchanger[5] |
Plan your fab
Building a Test & Probe process? Get a complete equipment list.
Open the fab equipment planner →