Comparison ledger
Lam Research AutoEtch 490 plasma etcher plasma etch semiconductor, Lam Research AutoEtch 590 plasma etcher plasma etch semiconductor, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ||
|---|---|---|
| OEM | Lam Research | Lam Research |
| Category | Etch | Etch |
| Wafer size | 6" | 6" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research AutoEtch 490 plasma etcher plasma etch semiconductor | Lam Research AutoEtch 590 plasma etcher plasma etch semiconductor |
| Cited variants |
| — |
| Specifications | ||
| Category | Plasma Etch[1] | Plasma Etch[4] |
| Original Equipment Manufacturer | Lam Research[1] | Lam Research[4] |
| Condition | AS IS condition(One chiller, no pump, With ENI OEM 12 RF Generator)[1] | AS IS condition(No chiller, no pump, With ENI OEM 12 RF Generator)[4] |
| Wafer Size | 4,5,6 inch capability.[1] | 4,5,6 inch capability.[4] |
| Valid Time | Subject to prior sale[1] | Subject to prior sale[4] |
| Lead Time | Ready to go[1] | Ready to go[4] |
| Warranty | No.[1] | No.[4] |
| Refund | No.[1] | No.[4] |
| Inspection | Against appointment[1] | Against appointment[4] |
| Model | Lam AutoEtch 490 SN1644[1] | Lam AutoEtch 590[4] |
| Wafer size | Lam AutoEtch 490 Wafer Belt Drive System[1] | Lam AutoEtch 590 Wafer Belt Drive System[4] |
| RF generator | ENI OEM 12 RF Generator[1] | — |
| Chamber type | parallel plate[1] | — |
| Wafer handling | cassette to cassette, single wafer[1] | cassette-to-cassette[4] |
| Number of gases | 5 independent, capacity for 6[1] | — |
| Coolant | Ethylene glycol or deionized water[1] | — |
| Control processor | Z80 microprocessor[2] | — |
| Polysilicon etch rate (Cl/He) | ≥3500 Å/min[3] | — |
| Polysilicon etch uniformity (3σ) | ±15%[3] | — |
| Polysilicon/profile control | 85-90 degrees[3] | — |
| Isotropic polysilicon etch rate (SF6/He) | 6000-12000 Å/min[3] | — |
| Nitride etch rate (SF6/He sloped) | ≥1800 Å/min[3] | — |
| Nitride etch rate (SF6/He anisotropic) | 1000-2000 Å/min[3] | — |
| Wafer Size Capability | — | 4,5,6 inch[4] |
| Wafer Size Configuration | — | 4 and 6 inch configuration without hardware change[5] |
| Wafer Handling | — | In-line cassette to cassette, fully automated, single wafer[4] |
| Chamber Type | — | Double air-locked, parallel plate[4] |
| RF Generator | — | ENI OEM 12[4] |
| Display | — | CRT monitor display[4] |
| Control | — | Automatic, closed-loop feedback control, double keylocked[4] |
| Gas Panel Capacity | — | Five gases independently, actual capacity six gases (two may share fifth flow controller)[4] |
| OEM | — | Lam Research[4] |
| Wafer size capability | — | 4, 5, 6 inch capability[4] |
| Process type | — | single wafer[4] |
| Automation | — | fully automated[4] |
| Chamber structure | — | double air-locked[4] |
| Plasma configuration | — | parallel plate[4] |
| Process parameters | — | RF power, chamber pressure, gas flow control, electrode spacing, and multi-step process recipes[6] |
| Control architecture | — | automatic, closed-loop feedback control[4] |
| Interlock | — | double keylocked[4] |
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