Waferpedia

Comparison ledger

12 Lapperversus6 DS SP

Lapmaster 12 Lapper, Strasbaugh 6 DS SP, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
12 LapperLapmaster
6 DS SPStrasbaugh
OEMLapmasterStrasbaugh
CategoryCMPCMP
Wafer size—Single Wafer SiC Substrate
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
Family—Strasbaugh 6 DS SP
Specifications
Outside plate diameter12 inches[1]—
Lapping Speed Range0 to 60 rpm[2]—
Wafer Size Compatibility4 inches or smaller[1]—
Input Voltage110 V[1]—
Frequency60 Hz[1]60 Hz[4]
Phase1[1]3 Phase[4]
Number of Rings3[1]—
Number of Weights3[1]—
Includes Slurry SystemYes[1]—
Includes TimerYes[1]—
Configuration—Multi Process[3]
Voltage—208 V, 3 Phase, 60 Hz[4]
Full Load—60 A[4]
Motor—36 A[4]
Interrupting Capacity—10,000 A[4]
Wafer size—Single Wafer SiC Substrate[4]
Make—Strasbaugh[3]
Model—6 DS SP[3]
Equipment type—CMP (Chemical Mechanical Polisher)[3]
Wafer sizes—8 inch[3]
Operating voltage—208 V[4]
Full load current—60 A[4]
Motor current—36 A[4]
Automation—Fully automated[4]
Material—Single Wafer SiC Substrate[4]
Wafer carriers—2 x 150 mm wafer carriers; 1 x 150 mm wafer carriers[4]
Carrier rebuild kit—Acid resistance carrier rebuild kit[4]
Temperature control—Table temperature control unit (SMC chiller)[4]
Loading—Two cassette slots for loading[4]
Unloading—Two cassette slots for unloading[4]
Polish mode—Single sided polish[4]
Polish modules—1 polish module equipped with dedicated hardware[4]
Pad conditioning—Programmable pad conditioning[4]
Spindle—Overam spindle with 4 passage rotary union[4]
Slurry dosing—Slurry perilstatic pump dosing on the table[4]
Vacuum—Universal vacuum pump[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]jmind.comjmind.com
  2. [2]etd.ohiolink.eduetd.ohiolink.edu
  3. [3]inventory listing
  4. [4]inventory listing