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Comparison ledger

1505 G 6 EversusNSR S 205 C

Nikon 1505 G 6 E, Nikon NSR S 205 C, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
OEMNikonNikon
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run1988–—
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyNikon 1505Nikon NSR
Specifications
Configuration5" reticle[1]248nm (KrF)[4]
Resolution650 nm[2]—
Numerical Aperture0.54[2]0.75[5]
Reduction5x[2]—
Exposure Field15 x 15 mm[2]25 mm × 33 mm[5]
Alignment Accuracy130 nm[2]—
Wafer Size4 inch[1]—
Light Sourceg-line[3]—
Introduction Year1988[2]—
NA (Numerical Aperture)0.54[2]—
MakeNikon[1]Nikon[4]
Model1505 G 6 E[1]NSR S 205 C[4]
CategoryStepper[1]—
Wafer Sizes4 inch[1]12 inch[4]
Exposure typeg-line[2]—
NA0.54[2]—
Exposure field9.3 x 18.8 mm[2]25 mm x 33 mm[5]
Type—Scanner[4]
Wavelength—248 nm (KrF)[4]
Minimum Feature Size—0.13 µm[5]
Overlay Accuracy—< 30 nm[5]
Throughput (200 mm)—140-200 wafers per hour[5]
Throughput (300 mm)—84 wafers per hour[5]
Reduction Ratio—4:1[5]
Wafer Sizes Supported—200 mm and 300 mm (field-upgradable)[5]
Exposure wavelength—248nm (KrF)[4]
Generation—fifth-generation KrF scanner[5]
Projection lens features—reliably produce 0.13 µm features in a production environment[5]
Throughput—at least 140 - 200 mm wafers per hour or 84 - 300 mm wafers per hour[5]
System configuration—can be shipped as either 200 mm or 300 mm, or can be field-upgraded to a 300 mm configuration[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]web.archive.orgweb.archive.org
  3. [3]ece.utoronto.caece.utoronto.ca
  4. [4]inventory listing
  5. [5]web.archive.orgweb.archive.org