Comparison ledger
Nikon 1505 G 6 E, SUSS MicroTec BA 8, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1505 G 6 ENikon | BA 8SUSS MicroTec |
|---|---|---|
| OEM | Nikon | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 1988– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Nikon 1505 | SUSS MicroTec BA 8 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 5" reticle[2] | 50/60 Hz[5] |
| Resolution | 650 nm[3] | — |
| Numerical Aperture | 0.54[3] | — |
| Reduction | 5x[3] | — |
| Exposure Field | 15 x 15 mm[3] | — |
| Alignment Accuracy | 130 nm[3] | — |
| Wafer Size | 4 inch[2] | — |
| Light Source | g-line[4] | — |
| Introduction Year | 1988[3] | — |
| NA (Numerical Aperture) | 0.54[3] | — |
| Make | Nikon[2] | — |
| Model | 1505 G 6 E[2] | — |
| Category | Stepper[2] | — |
| Wafer Sizes | 4 inch[2] | — |
| Exposure type | g-line[3] | — |
| NA | 0.54[3] | — |
| Exposure field | 9.3 x 18.8 mm[3] | — |
| Phase | — | 1+N / 2 Phase[5] |
| Power | — | 1kVA[5] |
| Type | — | bond aligner[6] |
| Application | — | wafer bonding and alignment[6] |
| Power frequency | — | 50/60 Hz[5] |
| Voltage | — | 208-230 V[5] |
| Alignment capability | — | submicron wafer-to-wafer bond alignment[1] |
| Alignment modes | — | top, bottom, and multi-layer alignment modes[1] |
| Optical options | — | visible light and infrared[1] |
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