Comparison ledger
Seiko Epson NS 8080 SH, Tenney , TPS JR-A-F4T Junior compact temperature test chambers, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NS 8080 SHSeiko Epson | |
|---|---|---|
| OEM | Seiko Epson | Tenney |
| Category | Test & Probe | Test & Probe |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Seiko Epson NS 8080 | Tenney , TPS JR-A-F4T Junior compact temperature test chambers |
| Specifications | ||
| Configuration | High Speed[1] | — |
| Voltage | 200 Vac[2] | — |
| Category | Test & Probe[2] | — |
| Type | IC Handler[1] | — |
| Speed | High Speed[1] | — |
| Power Requirements | Single Phase, 200 Vac, 50/60 Hz[2] | — |
| Testing capability | 8-site (4 x 2)[3] | — |
| Testing area | 184 x 149 mm[3] | — |
| Max. Contact Force | 120 kgf[3] | — |
| Maximum Throughput | Ambient Temperature: 13,500 units per hour; High Temperature: 8,200 units per hour[3] | — |
| Frequency | 50/60 Hz[2] | — |
| Devices Handled | QFP, TSOP, CSP, WLCSP, BGA, QFN, PLCC, LGA, PGA[3] | — |
| Test Mode | 8-site (4 x 2) Square; 4-site (2 x 2) In-Line; 4-site (4 x 1); 2-site Single[3] | — |
| Heating Method | Heating Plate[3] | — |
| Temperature Accuracy | 50 - 90°C ±2°C; 90 - 155°C ±3°C[3] | — |
| Binning | Max. 6 bins (Auto 3, Manual 3)[3] | — |
| Tray | JEDEC (135.9 x 315.0 mm)[3] | — |
| Handler Dimensions | 1,500 x 1,860 x 2,000 mm[3] | — |
| Weight | 1,090kg[3] | — |
| Chamber Size | — | 1.2 cubic feet[4] |
| Temperature Range | — | -68°C to +180°C[4] |
| Control | — | +/-1.0°C[4] |
| Manufacturer | — | Tenney[4] |
| Model | — | JR-A-F4T[4] |
| Short description | — | Junior compact temperature test chambers[4] |
| Control accuracy | — | +/-1.0°C[4] |
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