Comparison ledger
Applied Materials 0010-13622 RF Match for, STS 310, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | 310STS |
|---|---|---|
| OEM | Applied Materials | STS |
| Category | Deposition | Deposition |
| Wafer size | — | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | STS 310 |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | — |
| Model | 0010-13622[1] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Tool type | — | plasma-enhanced chemical-vapor-deposition (PECVD) system[2] |
| Wafer size | — | 100-mm-diameter silicon wafers[2] |
| Deposition material | — | silicon dioxide[2] |
| Process | — | Plasma-enhanced chemical vapor deposition (PECVD)[2] |
| Wafer Size | — | 100 mm[2] |
| Deposited Materials | — | Silicon dioxide (oxide) and silicon nitride (SiNx)[2] |
| Oxide Recipe Details | — | 2% SiH4 in Ar at 400 sccm, N2O at 900 sccm, 60 W at 13.56 MHz, 650 mtorr, 300 °C[2] |
| Nitride Recipe (Low RI) Details | — | 2% SiH4 in Ar at 200 sccm, N2 at 2000 sccm, power alternating between 30 W at 13.56 MHz for 6 s and 25 W at 187 kHz for 3 s, 650 mtorr, 300 °C[2] |
| Nitride Recipe (High RI) Modification | — | Increase 2% SiH4/Ar flow to 500 sccm[2] |
| Temperature | — | 300 °C[2] |
| Pressure | — | 650 mtorr[2] |
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