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0010-13622 RF Match forversusCC2

Applied Materials 0010-13622 RF Match for, Varian CC2, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
0010-13622 RF Match forApplied Materials
CC2Varian
OEMApplied MaterialsVarian
CategoryDepositionDeposition
Wafer size—6"
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-13622 RF Match forVarian CC2
Cited variants—
Specifications
ConfigurationHigh Efficiency HE RF Match-Bias[2]—
Model0010-13622[2]CC2 (senTorr CC2)[3]
Product TypeRF Match for PVD (Physical Vapor Deposition)[2]—
FeatureHigh Efficiency HE RF Match-Bias[2]—
manual listed—Varian CC2 Manual[3]
film deposition type—sputter deposition of metals, alloys, and insulating thin films[3]
stage diameter—6" diameter stage[3]
co-sputter capability—co sputter capable[3]
reactive sputtering—available (Nitrogen or Oxygen)[3]
Part Number—L91213020000[1]
OEM—Varian[1]
Process—Sputter deposition of metals, alloys, and insulating thin films[3]
Film thickness—Controllable from a few nm to hundreds of nm[3]
Cathodes—Three 3-inch diameter confocal cathodes[3]
Power supplies—2 RF power supplies and a switchable DC power supply[3]
Co-sputter capability—Yes[3]
Reactive sputtering—Available with nitrogen or oxygen[3]
Stage diameter—6-inch diameter stage[3]
Substrate rotation—+/- 10% uniformity[3]
Vacuum system—Cryo and turbo pumped to 1 x 10^7 Torr[3]
Substrate heat—Up to 200 C[3]
Liftoff deposition—Supported with sputter power[3]
Argon pressure range—3-15 mT[3]
MFC controller—200 sccm MFC controller, no APC valve[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]ebay.comebay.com
  2. [2]inventory listing
  3. [3]nanofab.utah.edunanofab.utah.edu