Comparison ledger
Applied Materials Endura 5500 IMP, Perkin Elmer PE 4400, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Endura 5500 IMPApplied Materials | PE 4400Perkin Elmer |
|---|---|---|
| OEM | Applied Materials | Perkin Elmer |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Endura 5500 | Perkin Elmer PE 4400 |
| Specifications | ||
| Software Version | B8.01[2] | — |
| Wafer Type | Notch[2] | — |
| Configuration | No SMIF Interface2 x OD[2] | Not operational[4] |
| Line Frequency | 50 Hz[2] | — |
| Line Voltage | 200-208 V[2] | — |
| Line Amperage | 320 A[2] | — |
| Make | Applied Materials[2] | Perkin Elmer[4] |
| Model | Endura 5500 IMP[2] | PE 4400[4] |
| Category | Deposition[3] | Deposition[5] |
| Wafer Sizes | 8 inch[2] | — |
| PVD type | Physical Vapor Deposition[3] | — |
| No SMIF Interface | 2 x OD[2] | — |
| Vacuum | CTI 9600 Cryo compressor (2)[3] | — |
| Chamber A | Pre-Clean Chambers[2] | — |
| Chamber B | Cool Down Chamber[2] | — |
| Chamber C | Chamber C[2] | — |
| Chamber D | Chamber D[2] | — |
| Chamber E | Degas/Orienter Chamber[2] | — |
| Chamber F | Degas/Orienter Chamber[2] | — |
| Chamber 1 | Chamber Process: PC II[2] | — |
| Chamber 2 | Chamber Process: IMPTiN; Rough Pump Not Included[2] | — |
| Chamber 3 | Chamber Process: IMPTiN; Rough Pump Not Included[2] | — |
| Buffer Chamber | Robot: HP 2000 Vintage[2] | — |
| Chamber 1 process | IMPTiN[2] | — |
| Chamber 2 process | IMPTiN[2] | — |
| Chamber 3 process | IMPTiN[2] | — |
| Loadlock Type | Wide Body L/L[2] | — |
| Chamber Process | PC II[2] | — |
| Robot | HP[2] | — |
| Manufacturer | Applied Materials[2] | — |
| Wafer size | 8 inch[2] | — |
| SMIF interface | No SMIF Interface[2] | — |
| Electrical line frequency | 50 Hz[2] | — |
| Electrical line voltage | 200-208 V[2] | — |
| Electrical line amperage | 320 A[2] | — |
| Buffer chamber robot | HP 2000 Vintage[2] | — |
| Chamber process | PC II; IMPTiN[2] | — |
| Equipment type | — | Sputtering System[4] |
| Cathode shape | — | Circular[1] |
| Cathode size | — | 8 inch[1] |
| Cathode port amount | — | 1 to 4[1] |
| Cathode / sputter type | — | RF Magnetron[1] |
| DC power supply | — | 1-5 KW[1] |
| RF power supply | — | 1-2 KW[1] |
| Process gas | — | Argon (200 SCCM) standard[1] |
| Gas lines | — | Up to 3 gas lines, MFC customized[1] |
| Substrate size | — | Small to 6 inch[1] |
| Wafer load | — | Manually load, capable of limited automatic operation[1] |
| Throughput per batch | — | 3 inch wafer, 30 pieces; 4 inch wafer, 13 pieces; 5 inch wafer, 9 pieces; 6 inch wafer, 7 pieces[1] |
| Sputter rate | — | 20 to 500 Angstroms/kw-min depending on model, cathode, process, sputter material, etc.[1] |
| Uniformity capacity | — | ±7%~10%[1] |
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