Comparison ledger
ASML PAS 5500 60, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PAS 5500 60ASML | 1505 G 6 ENikon |
|---|---|---|
| OEM | ASML | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML PAS 5500 | Nikon 1505 |
| Specifications | ||
| Configuration | Parts have been swapped out[1] | 5" reticle[7] |
| Resolution | 450 nm[2] | 650 nm[8] |
| Wavelength | 365 nm (i-line)[2] | — |
| Wafer size | 200 mm (eight-inch)[3] | — |
| Throughput | up to 48 wafers per hour (200 mm, 55 exposures, 200 mJ/cm²)[3] | — |
| Design rule | 0.45 µm (450 nm)[3] | — |
| Manufacturer | ASML[1] | — |
| Model | PAS 5500 / 60[1] | 1505 G 6 E[7] |
| Technology | i-line stepper[2] | — |
| Exposure wavelength | 365 nm near-UV light[2] | — |
| Maximum die area per exposure | 18 mm by 22.4 mm[6] | — |
| Reduction ratio | 5:1 reducing stepper[6] | — |
| Automatic processing capability | automatic 100 mm wafer cassette processing capability[6] | — |
| Numerical Aperture | — | 0.54[8] |
| Reduction | — | 5x[8] |
| Exposure Field | — | 15 x 15 mm[8] |
| Alignment Accuracy | — | 130 nm[8] |
| Wafer Size | — | 4 inch[7] |
| Light Source | — | g-line[9] |
| Introduction Year | — | 1988[8] |
| NA (Numerical Aperture) | — | 0.54[8] |
| Make | — | Nikon[7] |
| Category | — | Stepper[7] |
| Wafer Sizes | — | 4 inch[7] |
| Exposure type | — | g-line[8] |
| NA | — | 0.54[8] |
| Exposure field | — | 9.3 x 18.8 mm[8] |
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