Comparison ledger
Bruker Tespa, Rorze 03 RR 8120-001-001 Wafer Exchanger, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | TespaBruker | |
|---|---|---|
| OEM | Bruker | Rorze |
| Category | Test & Probe | Test & Probe |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Bruker Tespa | Rorze 03 RR 8120-001-001 Wafer Exchanger |
| Cited variants | — | |
| Specifications | ||
| Make | Bruker[4] | — |
| Model | Tespa[4] | 03 RR 8120-001-001[6] |
| Product type | Prober[4] | — |
| TESPA-V2 package quantity | Pack of 10[1] | — |
| TESPA-V2 probe type | High quality etched silicon probes[1] | — |
| TESPA-V2 application modes | TappingMode and other non-contact modes[1] | — |
| TESPA-V2 mounting | Unmounted for use on standard AFMs[1] | — |
| TESPA-V2 geometry | Rectangular[1] | — |
| TESPA-V2 tip radius | 7-10 nm[1] | — |
| TESPA-V2 frequency | 320 kHz nominal; 270-370 kHz min/max[1] | — |
| TESPA-V2 spring constant | 37 N/m nominal; 19-55 N/m min/max[1] | — |
| TESPA-V2 length | 123 µm nominal; 120-125 µm min/max[1] | — |
| TESPA-V2 width | 40 µm nominal; 37-42 µm min/max[1] | — |
| TESPA-V2 cantilever thickness | 3.3 µm nominal; 2.8-3.8 µm range[1] | — |
| TESPA-V2 cantilever material | Si[1] | — |
| TESPA-V2 reflex coating | Reflective Aluminum[1] | — |
| TESPA-V2 tip height | 12.5 µm nominal; 10-15 µm range[1] | — |
| TESPA-V2 front angle | 25° nominal; 22.5-27.5° range[1] | — |
| TESPA-V2 back angle | 17.5° nominal; 15-20° range[1] | — |
| TESPA-V2 side angle | 20° nominal; 17.5-22.5° range[1] | — |
| TESPA-HAR geometry | Rectangular[3] | — |
| TESPA-HAR tip radius | 10-15 nm[3] | — |
| TESPA-HAR frequency | 320 kHz nominal; 230-410 kHz min/max[3] | — |
| TESPA-HAR spring constant | 42 N/m nominal; 20-80 N/m min/max[3] | — |
| TESPA-HAR length | 125 µm nominal; 110-140 µm range[3] | — |
| TESPA-HAR width | 40 µm nominal; 30-50 µm range[3] | — |
| TESPA-HAR application note | Ideal for TappingMode imaging on samples with tall/deep geometries, such as semiconductor trench imaging[3] | — |
| TESPA-HAR tip height | 10-15 µm[3] | — |
| TESPA-HAR tip angles | Front 5° ± 1°, back 5° ± 1°, side 5° ± 1°[3] | — |
| TESPA-HAR cantilever thickness | 4 µm nominal; 3.25-4.75 µm range[3] | — |
| TESPA-HAR back side coating | Reflective Aluminum[3] | — |
| Type | AFM probe[5] | — |
| Use mode | TappingMode and other non-contact modes[1] | — |
| Probe material | etched silicon[1] | — |
| Geometry | rectangular[1] | — |
| Cantilever material | Si[1] | — |
| Tip radius | 7 to 10 nm[1] | — |
| Frequency | 320 kHz[1] | — |
| Spring constant | 37 N/m[1] | — |
| Length | 123 µm[1] | — |
| Width | 40 µm[1] | — |
| Cantilever thickness | 3.3 µm[1] | — |
| Reflex coating | Reflective aluminum[1] | — |
| Tip height | 12.5 µm[1] | — |
| Front angle | 25°[1] | — |
| Back angle | 17.5°[1] | — |
| Side angle | 20°[1] | — |
| Probe type | AFM probe[1] | — |
| Use modes | TappingMode and other non-contact modes[1] | — |
| Cantilever geometry | Rectangular[1] | — |
| Pack quantity | 10 per pack[1] | — |
| Wafer size | — | 8 inch[6] |
| Manufacturer | — | Rorze[6] |
| Equipment type | — | Wafer Exchanger[6] |
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