Comparison ledger
EV Group 810, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 810EV Group | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | EV Group | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | EV Group 810 | Oxford Instruments 100 ICP Fluorine |
| Cited variants |
| — |
| Specifications | ||
| Listed function | Plasma Activation[2] | — |
| Tool category | Plasma Etching and Cleaning[2] | — |
| Model designation | EVG 810[2] | — |
| Function | Plasma Activation[3] | — |
| Wafer diameter (substrate size) | 50 - 200, 100 - 300 mm[1] | — |
| Process gases | 2 standard process gases (N2 and O2)[1] | — |
| Vacuum system | 9x10-2 mbar[1] | — |
| Opening/closing of chamber | automated[1] | — |
| Loading/unloading of chamber | manual (wafer / substrate placed on loading pins)[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[4] |
| Cryo DRIE etch rate | — | up to 5 µm/min[4] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[4] |
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