Waferpedia

Comparison ledger

2135versusP 22 Surface

KLA 2135, KLA P 22 Surface, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
2135KLA
OEMKLAKLA
CategoryMetrology & InspectionMetrology & Inspection
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyKLA 2135KLA P
Specifications
Product typewafer inspection system[1]—
Technologyadvanced sensor and image processing technologies[1]—
Inspection methodbrightfield, small-pixel, high data rate, digital image processing technology[1]—
Defect detectiondetects all types of yield-relevant defects on all process layers[1]—
Operational usein-line monitoring of advanced processes[1]—
Throughputtwo- to three-times throughput improvement over the earlier model KLA 2132[1]—
Inspection technologybrightfield, small-pixel, high data rate, digital image processing technology[1]—
Throughput improvement over KLA 2132two to three times[1]—
Laser type193nm DUV laser[2]—
Laser output power200W[2]—
Objective NA0.95[2]—
Scan speed120 mm/sec[2]—
Power supply input3-phase 480V[2]—
Power supply output12V DC[2]—
Target process node90nm–28nm[2]—
Configuration—UPI Board Only[3]
Manufacturer—KLA[3]
Model—P 22 Surface[4]
Equipment type—surface profilometer[3]
Category—Metrology & Inspection[3]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]caladansemi.comcaladansemi.com
  3. [3]waferpedia.comwaferpedia.com
  4. [4]Equipment inventory listing