Comparison ledger
Lam Research Concept Two Speed, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Concept Two SpeedLam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Concept Two | Oxford Instruments 100 ICP Fluorine |
| Cited variants |
| — |
| Specifications | ||
| Configuration | 1 Shrink chamber[2] | — |
| Manufacturer | Lam Research[3] | — |
| Configuration option | Shrink chamber[3] | — |
| Asset # | 68566[2] | — |
| Make | Lam / Novellus[2] | — |
| Model | Concept Two Speed[2] | — |
| Process type | Etch chamber[1] | — |
| Platform | Novellus Concept Two platform[1] | — |
| Voltage | 208 VAC[1] | — |
| Phase | 3 phase[1] | — |
| Frequency | 50/60 Hz[1] | — |
| Type | Chamber Only[1] | — |
| Full load current | 21 A[1] | — |
| Main breaker rating | 25 A[1] | — |
| Largest load | 8 A[1] | — |
| Intended wafer size | 8 inch[4] | — |
| Wafer shape | Notch[4] | — |
| SMIF interface | Yes[4] | — |
| Chamber configuration | 1 shrink chamber; 1 standard chamber[2] | — |
| Largest load current | 8 A[1] | — |
| Interrupt current | 10 KA[1] | — |
| Vintage | 2010[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[5] |
| Cryo DRIE etch rate | — | up to 5 µm/min[5] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[5] |
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