Comparison ledger
Lam Research Gasonics Aura 2000, Lam Research Gasonics Aura 3010, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Gasonics Aura 2000Lam Research | Gasonics Aura 3010Lam Research |
|---|---|---|
| OEM | Lam Research | Lam Research |
| Category | — | Resist Processing |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Gasonics Aura | Lam Research Gasonics Aura |
| Specifications | ||
| Phase | 3 Phase[1] | — |
| Frequency | 50 Hz[1] | — |
| Voltage | 208V[1] | — |
| Manufacturer | Lam Research[1] | — |
| Make | Lam / Novellus / Gasonics[2] | Lam / Novellus / Gasonics[4] |
| Model | Aura 2000[2] | Aura 3010[4] |
| Category | Plasma Asher Descum[3] | — |
| Pressure | 0.5 – >5.0 torr[3] | — |
| Platen temperature | 150 – 300°C[3] | — |
| Microwave power | 0 – 1000 watts at 2.45 GHz[3] | — |
| Lamp utilization | 0 – 100% (1000 watts)[3] | — |
| Throughput | 45-60 wph[3] | — |
| Asher rate | 1.5u-5u/min. positive photoresist; >8u/min. negative photoresist[3] | — |
| Uniformity | 15%, process dependent[3] | — |
| Particulate | <0.05 /cm2 (0.03um or greater)[3] | — |
| Damage | CV: <0.I V CV-shift for 250A gate oxide[3] | — |
| Selectivity | >1000:1[3] | — |
| Configuration | — | Parts machine[4] |
| Equipment type | — | Asher[6] |
| Wafer size | — | 6 inch[6] |
| Condition | — | Parts machine[4] |
| Type | — | Asher[4] |
| Wafer Sizes | — | 6 inch[6] |
| Product description | — | Parts machine[4] |