Waferpedia

Comparison ledger

1 DP 41versus6 DS SP

Logitech 1 DP 41, Strasbaugh 6 DS SP, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
1 DP 41Logitech
6 DS SPStrasbaugh
OEMLogitechStrasbaugh
CategoryCMPCMP
Wafer size—Single Wafer SiC Substrate
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLogitech 1 DP 41Strasbaugh 6 DS SP
Specifications
Phase3 Phase[1]3 Phase[3]
Configuration50/60 Hz[1]Multi Process[2]
Voltage480 V[1]208 V, 3 Phase, 60 Hz[3]
MakeLogitech[1]Strasbaugh[2]
Model1 DP 41[1]6 DS SP[2]
Frequency50/60 Hz[1]60 Hz[3]
Current12 amps[1]—
Full Load—60 A[3]
Motor—36 A[3]
Interrupting Capacity—10,000 A[3]
Wafer size—Single Wafer SiC Substrate[3]
Equipment type—CMP (Chemical Mechanical Polisher)[2]
Wafer sizes—8 inch[2]
Operating voltage—208 V[3]
Full load current—60 A[3]
Motor current—36 A[3]
Automation—Fully automated[3]
Material—Single Wafer SiC Substrate[3]
Wafer carriers—2 x 150 mm wafer carriers; 1 x 150 mm wafer carriers[3]
Carrier rebuild kit—Acid resistance carrier rebuild kit[3]
Temperature control—Table temperature control unit (SMC chiller)[3]
Loading—Two cassette slots for loading[3]
Unloading—Two cassette slots for unloading[3]
Polish mode—Single sided polish[3]
Polish modules—1 polish module equipped with dedicated hardware[3]
Pad conditioning—Programmable pad conditioning[3]
Spindle—Overam spindle with 4 passage rotary union[3]
Slurry dosing—Slurry perilstatic pump dosing on the table[3]
Vacuum—Universal vacuum pump[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]inventory listing