Waferpedia

Comparison ledger

S 308 Fversus150 e Mask

Nikon S 308 F, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
S 308 FNikon
150 e MaskSUSS MicroTec
OEMNikonSUSS MicroTec
CategoryLithographyLithography
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyNikon S 308 FSUSS MicroTec 150 e Mask
Specifications
ConfigurationHDD included[1]—
Light sourceArF (193 nm)[2]—
Numerical aperture0.92[2]—
Exposure area26 x 33 mm[2]—
Reduction ratio1:4[2]—
Resolution<65 nm[2]—
Throughput (300 mm)>145 wph[2]—
Throughput (200 mm)>165 wph[2]—
Wafer size200/300 mm[2]—
Overlay accuracy8 nm[2]—
Polarization controlPOLANO[2]—
Wafer size (alternative)12 inch[1]—
Wavelength193 nm[2]—
Lens NA0.92[2]—
Polarization ControlPOLANO (optional)[2]—

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]web.archive.orgweb.archive.org