Comparison ledger
ABM -407B-2-S-CE-S293 Robot, Lam Research TCP 9600 SE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | TCP 9600 SELam Research | |
|---|---|---|
| OEM | ABM | Lam Research |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ABM -407B-2-S-CE-S293 Robot | Lam Research TCP 9600 SE |
| Cited variants | — |
|
| Specifications | ||
| Model | ABM-407B-2-S-CE-S293[2] | — |
| Description | ROBOT[2] | — |
| Refurbished RTP RTA | AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[2] | — |
| KLA-Tencor Spare Parts and Service | RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[2] | — |
| Refurbished Isotropic Plasma Etcher | Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[2] | — |
| Refurbished PECVD, ALD Equipment | Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[2] | — |
| Refurbished Mask Aligner | Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[2] | — |
| Refurbished Bonding | SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[2] | — |
| Refurbished Wafer Prober | Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[2] | — |
| Process type | — | Metal etch (Al, TiW)[3] |
| Wafer sizes | — | 6 inch, 8 inch[1] |
| Substrate size | — | 150 mm diameter[3] |
| Plasma source | — | Transformer-coupled plasma (TCP) coil[1] |
| Process gases | — | Cl2, BCl3, HBr, SF6, CF4, Ar, N2, O2, He[3] |
| Process pressure | — | 0-100 mTorr[3] |
| Top electrode power | — | 0 – 1250W[3] |
| Lower electrode power | — | 0 – 1200W[3] |
| Process temperature | — | 55°C[3] |
| Endpoint detection | — | Adjustable monochromator[3] |
| Strip module | — | Decoupled source quartz (DSQ) strip module[3] |
| Al etch rate (recipe 600/601) | — | 800 nm/min[3] |
| Photoresist etch rate (recipe 600/601) | — | 400 nm/min[3] |
| Al2O3 etch rate (recipe 640) | — | 100-120 nm/min[3] |
| Electrical requirements | — | 208V/80A[1] |
| Chiller electrical requirements | — | 200/208VAC / 25A[1] |
| Software | — | Lam Envision[1] |
| Software version | — | E 1.5.2[1] |
| Wafer clamp | — | ESC (Electrostatic Chuck)[1] |
| Backside helium cooling | — | Yes[1] |