Comparison ledger
Applied Materials 0010-13622 RF Match for, CHA Solution E-Beam, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | |
|---|---|---|
| OEM | Applied Materials | CHA |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | CHA Solution E-Beam |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | 5 Wire[2] |
| Model | 0010-13622[1] | Solution E-Beam[2] |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Voltage | — | 220 VAC[2] |
| Phase | — | 3 Phase[2] |
| Frequency | — | 60 Hz[2] |
| Chamber type | — | Water cooled stainless steel chamber[3] |
| Electron beam gun | — | SmartSource electron beam gun with motor driven crucible rotation and lift lid[3] |
| Source pockets | — | 4 x 25cc material source pockets[3] |
| Source distance | — | 15 inches[3] |
| Chamber volume | — | 4.5 cubic feet[3] |
| Control | — | PLC automation with touchscreen[3] |
| Operational modes | — | Manual or automatic[3] |
| Deposition controller | — | Maxtek rate and thickness deposition controller integrated for control of shutter and electron beam power supply[3] |
| Substrate holder | — | Dome for holding 2 inch and/or 3 inch back loaded substrates positioned 90 degrees to the source; Dome for two 6 x 6 inch square back loaded substrates positioned 90 degrees to the source[3] |
| Material source pockets | — | 4 x 25cc[3] |
| Substrate sizes | — | 2 inch, 3 inch, 6x6 inch square[3] |
| Electrical requirements | — | 220 VAC, 3 Phase, 60 Hz, 5 Wire, 100 Amps[2] |
| Power supply | — | Glassman PS/LQ10N1.00GB4 (noted issue)[2] |
| Operation modes | — | Manual or automatic[3] |
| Available metals (list from UCLA) | — | Ti, Cr, Ni, NiFe, Al, Au, Ag, Pt, Cu, Nb, Gd, Co, Ge, Ag, Nb, Sn, W, Fe, TiN Ta, SiO2, NiO, TiO2, Al2O3, HfO2[4] |
| OEM | — | CHA Industries[3] |
| Type | — | E-beam evaporator[5] |
| Process type | — | PVD[5] |
| Deposition method | — | Electron beam (E-Beam) thin metal film evaporation[3] |
| Independent sources | — | Up to 4[3] |
| Power requirements | — | 220 VAC, 3 phase, 60 Hz, 5 wire, 100 amps[2] |
| Substrate holders | — | 2 inch and/or 3 inch back loaded substrates; two 6 x 6 inch square back loaded substrates; chip holders for substrate pieces[3] |
| Automation | — | PLC automation with touchscreen interface; manual or automatic operational modes[3] |
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