Comparison ledger
Applied Materials 0010-13622 RF Match for, Temescal FC-2000, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | FC-2000Temescal |
|---|---|---|
| OEM | Applied Materials | Temescal |
| Category | Deposition | Deposition |
| Wafer size | — | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Temescal FC-2000 |
| Cited variants | — | |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[2] | — |
| Model | 0010-13622[2] | FC-2000[1] |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[2] | — |
| Feature | High Efficiency HE RF Match-Bias[2] | — |
| System name | — | Temescal FC-2000 deposition system[1] |
| System type | — | Bell jar deposition system[1] |
| Operation | — | Fast-cycle, load-locked system[1] |
| Vacuum handling | — | Allows the source to remain under vacuum during substrate reloading[1] |
| Source tray | — | Supports multiple electron beam and resistance sources[1] |
| Standard source-to-substrate distance | — | 19.5 in[1] |
| Optional source-to-substrate distance with extension collar | — | 27.5 in[1] |
| Bell jar diameter | — | 20 in (508 mm)[1] |
| FC-2000 source tray diameter | — | 18 in (457 mm)[1] |
| Control system | — | Temescal Control System (TCS)[1] |
| Deposition controller | — | Inficon XTC/3 deposition controller[1] |
| Electron beam power supply | — | Temescal model CV-6SLX electron beam power supply[1] |
| Beam sweep controller | — | Temescal SuperSweep64 programmable beam sweep controller[1] |
| Source behavior during reload | — | Allows the source to remain under vacuum during substrate reloading[1] |
| Wafer count | — | 13x100mm wafers[3] |
| Power supply | — | 10 kV SIMBA 2 HV supply, max 15 kW[4] |
| Ion source | — | 3 cm ion source for argon sputter cleaning[4] |
| Substrate heating | — | Substrate heating by quartz lamp[4] |
| Application | — | Small-scale production and R&D[1] |
| Operating mode | — | Fast-cycle, load-locked[1] |
| Substrate reload behavior | — | Allows the source to remain under vacuum during substrate reloading[1] |
| Source compatibility | — | Supports multiple electron beam and resistance sources[1] |
| Optional source-to-substrate distance | — | 27.5 in with source well extension collar[1] |
| Source tray diameter | — | 18 in (457 mm)[1] |
| Wafer capacity option | — | 100-mm wafers[1] |
| Wafer capacity | — | 13 x 100-mm wafers[3] |
| Wafer handling | — | Sample can be mounted perpendicular or under a fixed angle[4] |
| Optional substrate fixture | — | Additional LN2 cooled substrate fixture available[4] |
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