Comparison ledger
Applied Materials 0010-13622 RF Match for, Ulvac SDP 570 VMS In Line, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | SDP 570 VMS In LineUlvac |
|---|---|---|
| OEM | Applied Materials | Ulvac |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Ulvac SDP 570 VMS In Line |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | Elevator[2] |
| Model | 0010-13622[1] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Sputter Method | — | (DC Magnetron Sputtering)[2] |
| Takt Time (Cycle Time) | — | 2.5 min[2] |
| Loader / Unloader | — | Manual substrate Loading)[2] |
| Required Electric Power | — | 3 phase, 220 V, 60 Hz, 615 kVA[2] |
| Substrate Material | — | Glass[2] |
| Required Floor Space | — | Approx. W 7000 × L 32,000 × H 3000 mm[2] |
| Target Attachment Method | — | Metal bonding to backing plate[2] |
| Vacuum conditions | — | Preheat Chamber: ≤ 1 × 10⁻⁶ Torr; Sputtering Chamber: ≤ 1 × 10⁻⁶ Torr; Isolation Chamber: ≤ 1 × 10⁻⁶ Torr[2] |
| Pump down time | — | Preheat Chamber: Approx. 45 seconds from atmospheric pressure to 0.2 Torr; Removal Chamber: Approx. 45 seconds from atmospheric pressure to 0.2 Torr[2] |
| Sputtering pressure | — | 8 × 10⁻⁴ to 8 × 10⁻³ Torr[2] |
| Thickness uniformity | — | 2.5 min Film Thickness - 1100 Å[2] |
| Target size | — | 144 mm × 690 mm × 6 mm[2] |
| Substrate on both sides | — | Yes[2] |
| Required compressed air | — | 5–7 kg/cm²G; Approx. 105.0 Nm³/hr (average)[2] |
| Required N2 gas | — | 0.5 kg/cm²G; Max: approx. 202 Nm³/hr; Normal: approx. 20.0 Nm³/hr[2] |
| Required process gases | — | Ar: 0.5 kg/cm²G, sccm; X: 0.5 kg/cm²G, sccm; Y: 0.5 kg/cm²G, sccm; Z: 0.5 kg/cm²G, sccm[2] |
| Required water cooling | — | 2.5 kg/cm²G; Approx. 25.2 m³/hr; Water temperature: 15–30 °C[2] |
| Process chamber | — | Sputtering Chamber; Input Chamber -> Cathode Chamber -> Output Chamber[2] |
| Configuration elements | — | Elevator; Preparation Chamber; Isolation Room; Removal Chamber; Return Conveyor[2] |
| Temperature | — | 2.5 kg/cm²G - Approx. 25.2 m³/hr - Water temperature: 15–30 °C[2] |
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