Comparison ledger
Applied Materials 0010-16392 ESC Assembly, Oxford Instruments Plasmalab 180 ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-16392 ESC AssemblyApplied Materials | Plasmalab 180 ICPOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-16392 ESC Assembly | Oxford Instruments Plasmalab |
| Specifications | ||
| OEM | Applied Materials[1] | — |
| Model | 0010-16392[1] | — |
| Type | ESC Assembly[1] | — |
| Wafer Size | 300 mm[2] | — |
| Electrode Configuration | Dual[2] | — |
| Configuration | — | For parts[3] |
| Process type | — | ICP (Inductively Coupled Plasma) high-density etching system configured for reactive ion etching[4] |
| System type | — | Load-locked plasma etching system with ICP source[4] |
| Operation | — | Fully automatic computer-controlled operation[4] |
| Maximum substrate size | — | 150 mm[4] |
| Configured substrate size | — | 100 mm wafers[4] |
| Wafer clamping | — | Mechanical clamping[4] |
| Backside cooling | — | Helium cooling[4] |
| Vacuum system | — | Alcatel turbo pump with controller and roughing pump[4] |
| Gas box | — | Six MFC gas controllers[4] |
| Previously used process gases | — | CHF3/CHF4, C3F8, C4F8, argon, oxygen, hydrogen, chlorine[4] |
| Electrical rating | — | 208V, 3-phase, 50/60 Hz[4] |
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