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Oxford Instruments

Plasmalab 180 ICP

EtchOxford Instruments Plasmalab family
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The Oxford Instruments Plasmalab 180 ICP is an inductively coupled plasma (ICP) high-density etching system configured for reactive ion etching. The Plasmalab System 100 ICP 180 is a load-locked plasma etching system with fully automatic computer control. The Oxford Instruments Plasmalab 180 ICP has a maximum substrate size of 150 mm and is currently configured for 100 mm wafers.[1]

Plasmalab 180 ICP — Inventory photo
Fig. 01Plasmalab 180 ICPInventory photo[2]

Power

208V, 3-phase, 50/60 Hz[1]

Gas delivery

Six MFC gas controllers[1]

What it is

The Oxford Instruments Plasmalab 180 ICP is an inductively coupled plasma (ICP) high density etching system.[1]

The system is a computer-controlled, load locked plasma etching system configured for reactive ion etching with an ICP source.[1]

How it works

The Plasmalab 180 ICP uses an inductively coupled plasma source to generate a high density plasma for etching.[1]

The system features a load locked architecture that separates the process chamber from the ambient environment, enabling automatic wafer handling.[1]

An Alcatel turbo pump with a controller and a roughing pump provides vacuum, while a gas box with six mass flow controller (MFC) gas channels manages process gas delivery.[1]

Where it fits in the process flow

The maximum substrate size supported by the Plasmalab 180 ICP is 150 mm, and the unit described is configured for 100 mm wafers.[1]

The chuck uses mechanical clamping with backside helium cooling to regulate wafer temperature during processing.[1]

Applications

Previously used process gases for the system include CHF3, CHF4, C3F8, C4F8, argon, oxygen, hydrogen, and chlorine, indicating capability for etching silicon, silicon dioxide, silicon nitride, and other materials.[1]

What do the numbers mean?

Power & electrical1

Electrical rating
208V, 3-phase, 50/60 Hz[1]
Accurate?

Vacuum & pumping1

Vacuum system
Alcatel turbo pump with controller and roughing pump[1]
Accurate?

Wafer handling3

Maximum substrate size
150 mm[1]
Accurate?
Configured substrate size
100 mm wafers[1]
Accurate?
Wafer clamping
Mechanical clamping[1]
Accurate?

Gas & chemistry2

Gas box
Six MFC gas controllers[1]
Accurate?
Previously used process gases
CHF3/CHF4, C3F8, C4F8, argon, oxygen, hydrogen, chlorine[1]
Accurate?

Control & software1

Operation
Fully automatic computer-controlled operation[1]
Accurate?

Configuration & options4

For parts[2]
Accurate?
Process type
ICP (Inductively Coupled Plasma) high-density etching system configured for reactive ion etching[1]
Accurate?
System type
Load-locked plasma etching system with ICP source[1]
Accurate?
Backside cooling
Helium cooling[1]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Vacuum systemAlcatel turbo pump with controller and roughing pump[1]
  • Gas boxSix MFC gas controllers[1]
  • Previously used process gasesCHF3/CHF4, C3F8, C4F8, argon, oxygen, hydrogen, chlorine[1]
  • Electrical rating208V, 3-phase, 50/60 Hz[1]

Where are the manuals?

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Not publicly documented

Field notes

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Not publicly documented

The following facts about the Plasmalab 180 ICP are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Plasmalab 180 ICP are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the Plasmalab 180 ICP are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the Plasmalab 180 ICP are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the Plasmalab 180 ICP are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the Plasmalab 180 ICP is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (2)Every fact above is drawn from these public sources
  1. [1]semistarcorp.comsemistarcorp.comsemistarcorp.com
  2. [2]Inventory photo
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Last updated Aug 14, 2026.

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