Waferpedia

Comparison ledger

0010-18024 Pyrometer AssemblyversusCandela 8520 Wafer

Applied Materials 0010-18024 Pyrometer Assembly, KLA Candela 8520 Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
OEMApplied MaterialsKLA
CategoryMetrology & InspectionMetrology & Inspection
Wafer size—Wafer Thickness 350μm ~ 1100μm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-18024 Pyrometer AssemblyKLA Candela 8520
Specifications
ConfigurationCapable of working on Applied Materials Radiance[1]50/60 Hz[2]
Voltage—208 VAC[2]
Largest Load—8 A[2]
Phase—1 Phase[3]
Wafer size—Wafer Thickness 350μm ~ 1100μm[3]
CDA Pressure—100 psi / 689 KPa (± 10% range)[3]
Flow—2 SCFM / 80 L/min (± 10% range).[3]
AMC—maximum concentration of Volatile Organic Compounds (VOC) must be less than 150 ng/l.[3]
Moisture Content—less than 20 PPM at 1.0 atm, corresponding to a dewpoint of -30° Celsius (-22°F).[3]
Vacuum Pressure—-680 mm Hg / -90 KPa (± 10% range).[3]
OEM—KLA[2]
Model—Candela 8520 Wafer[2]
Equipment type—Wafer inspection system[2]
Wafer thickness—350μm ~ 1100μm[3]
Power—230 V[3]
Electrical phase—1 Phase[3]
Electrical wiring—3 Wire[3]
Current—20 amps[3]
Frequency—50/60 Hz[3]
Wafer carrier—2 FUP 6 and 8[3]
Wafer mapping sensor—Micro Optical Sensor[3]
Interface—SECS-GEM[3]
CDA flow—2 SCFM / 80 L/min (± 10% range)[3]
Vacuum flow—0.64 SCFM / 18 L/min (± 10% range)[3]
Laser 1—405 nm wavelength, 60 mW power, Class IIIb per CDRH 21CFR 1040[3]
Laser 2—355 nm wavelength, 20 mW power, Class IIIb per CDRH 21CFR 1040[3]
Category—Wafer Inspection System[2]
Electrical—1 Phase, 3 Wire, 230 V, 20 amps, 50/60 Hz[3]
Laser wavelengths—405 nm and 355 nm[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]inventory listing