Comparison ledger
Applied Materials 0020 18493 Part, Oxford Instruments PlasmaPro NGP 1000, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0020 18493 PartApplied Materials | PlasmaPro NGP 1000Oxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Deposition | Deposition |
| Wafer size | — | up to 450mm wafer size |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0020 18493 Part | Oxford Instruments PlasmaPro NGP 1000 |
| Cited variants | — | |
| Specifications | ||
| Configuration | Bar,Cap Bank,Hdpcvd[2] | Load Locked Chamber[4] |
| Manufacturer | Applied Materials[2] | — |
| Model | 0020 18493[2] | — |
| Part description | Bar, Cap Bank, Hdpcvd[2] | — |
| Category | Deposition[3] | — |
| Configuration count | 1 documented configuration[3] | — |
| Wafer size | — | up to 450mm wafer size[4] |
| Power | — | 600W 13.56Mhz HF RF Generator[4] |
| Process Type | — | Plasma-Enhanced Chemical Vapor Deposition (PECVD)[4] |
| Wafer Size | — | up to 450mm[4] |
| Chamber | — | Load Locked Chamber[4] |
| Lower Electrode Diameter | — | 490mm[4] |
| Lower Electrode Material | — | Aluminum[5] |
| Maximum Temperature | — | 400°C[5] |
| RF Power (HF) | — | 600W at 13.56MHz[4] |
| RF Power (LF) | — | 600W at 100kHz[4] |
| RF Configuration | — | Dual Frequency RF with Pulsing for Film Stress Control[4] |
| Process Pump | — | Adixen ADS602P Dry Pump[5] |
| Load Lock Pump | — | Load Lock vacuum pump[5] |
| Gas Box | — | X20 External Gas Box with up to 12 Gas Lines[4] |
| Gas Configuration | — | He, CF4, N2, N20, NH3, SiH4-N2[4] |
| Control Software | — | Windows 7 with PC4500 Control Software[4] |
| PLC | — | X20 PLC[4] |
| Chamber Lift | — | Gas-Shock assisted Chamber Lift Mechanism[4] |
| Chamber Heating | — | Chamber Heating Kit (Heats Chamber Sidewalls to Minimize Process Deposition)[4] |
| Wafer handling | — | Load Locked Chamber[5] |
| HF RF power | — | 600W at 13.56MHz[5] |
| LF RF power | — | 600W at 100kHz[5] |
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