Comparison ledger
Applied Materials Centura DPS Poly, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura DPS PolyApplied Materials | 110Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura DPS Poly | Tegal 110 |
| Cited variants |
|
|
| Specifications | ||
| Wafer Size | 6 inch[3] | — |
| Tool Type | Poly Etcher[3] | — |
| Plasma Source Type | Decoupled Plasma Source (DPS)[1] | — |
| RF Pulsing Frequency | 1 kHz to 5 kHz[1] | — |
| Chamber Coating Material | Alumina or Y2O3[1] | — |
| Supported Process Node | 28 nm[1] | — |
| model | — | 110 SE[2] |
| application focus | — | process development applications[2] |
| process capability | — | deep silicon plasma etching[2] |
| capabilities | — | very high aspect ratio trench etch and profile control[2] |
| configuration | — | multiple configurations with minimum technical intervention[2] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[2] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[2] |
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