Comparison ledger
Applied Materials Centura eMXP+, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura eMXP+Applied Materials | 110Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | Oxide[2] | — |
| Software Version | E4.8_26[2] | — |
| Voltage | 208 VAC[2] | — |
| Full load current | 240A[3] | — |
| Frequency | 50/60 Hz[3] | — |
| Process | Nitride Spacer[2] | — |
| Wafer size | 8 inch[3] | — |
| Robot | HP+ Robot[2] | — |
| Excludes | LPT, Chiller, Dry Pump[2] | — |
| Manufacturer | Applied Materials[2] | — |
| Model | Centura eMXP+[2] | — |
| Category | Etch[3] | — |
| Power | 208 VAC[3] | — |
| Vacuum | Dry Pump[3] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[4] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[4] |
| Physical description | — | compact[1] |
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