Comparison ledger
Applied Materials Centura MXP, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura MXPApplied Materials | 110Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura MXP | Tegal 110 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 3 CH[2] | — |
| Phase | 3 Phase[2] | — |
| Frequency | 50 Hz[2] | — |
| Voltage | 208 VAC[2] | — |
| Wires | Four[3] | — |
| Full Load Current | 240 A[3] | — |
| H/E 1 | 0242-02163 REV D[4] | — |
| UPS | DPWR 35611[4] | — |
| H/E (CH-B_C_D_Wall) | 0242-02163 REV D[4] | — |
| Chambers | 3 CH[2] | — |
| Robot | HP Robot[2] | — |
| Power Supply Voltage | 208 VAC[2] | — |
| Power Supply Frequency | 50 Hz[2] | — |
| Number of Wires | Four / 4 Wires[2] | — |
| model | — | 110 SE[1] |
| application focus | — | process development applications[1] |
| process capability | — | deep silicon plasma etching[1] |
| capabilities | — | very high aspect ratio trench etch and profile control[1] |
| configuration | — | multiple configurations with minimum technical intervention[1] |
| System type | — | plasma etch system[5] |
| Supported components | — | MEMS and 3D-IC components[1] |
| Control capability | — | very high aspect ratio trench etch and profile control[5] |
| Physical description | — | compact[1] |
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