Waferpedia

Comparison ledger

DPS II CIPversus110

Applied Materials DPS II CIP, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.

Email
Side-by-side comparison of selected equipment models
Attribute
DPS II CIPApplied Materials
110Tegal
OEMApplied MaterialsTegal
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials DPSTegal 110
Cited variants—
Specifications
Configuration4x (D4) SILICON DPS II chamber, 12 Gas line (Standard Gas Line)[2]—
Applicable2 Chiller[2]—
Not applicableScrubber, Dry Pump[2]—
OEMApplied Materials[2]—
ModelDPS II CIP[2]—
CategoryEtch[3]—
Tool typeEtcher[3]—
Chamber4x (D4) SILICON DPS II chamber[2]—
Gas line12 Gas line (Standard Gas Line)[2]—
Chiller2 Chiller applicable[2]—
ScrubberNot applicable[2]—
Dry pumpNot applicable[2]—
Vintage2005[2]—
model—110 SE[1]
application focus—process development applications[1]
process capability—deep silicon plasma etching[1]
capabilities—very high aspect ratio trench etch and profile control[1]
configuration—multiple configurations with minimum technical intervention[1]
System type—plasma etch system[4]
Supported components—MEMS and 3D-IC components[1]
Control capability—very high aspect ratio trench etch and profile control[4]
Physical description—compact[1]

Plan your fab

Building a Etch process? Get a complete equipment list.

Open the fab equipment planner →
Sources (4)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com
  4. [4]waferpedia.comwaferpedia.com