Comparison ledger
Applied Materials Producer GT, Tegal 110, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Producer GTApplied Materials | 110Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | 2006– | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Producer | Tegal 110 |
| Cited variants |
| |
| Specifications | ||
| Chamber A | SiCoNi[1] | — |
| Chamber B | Frontier Etch[1] | — |
| Configuration | Missing:[1] | — |
| OEM | Applied Materials[4] | — |
| Model | Producer GT[4] | — |
| Wafer size | 12 inch[4] | — |
| Chamber names | A, B, C[2] | — |
| Current equipment status | Incoming[2] | — |
| Date of manufacture | 2009-01-01[2] | — |
| Configured wafer size | 300mm[2] | — |
| System power rating | 110 AC 3-Phase for system[2] | — |
| Loading configuration | 3 LP / 7 cooling station / 25 wafer FOUP[2] | — |
| Process capability | Advanced lithography and etch patterning down to the 22nm technology node[5] | — |
| model | — | 110 SE[3] |
| application focus | — | process development applications[3] |
| process capability | — | deep silicon plasma etching[3] |
| capabilities | — | very high aspect ratio trench etch and profile control[3] |
| configuration | — | multiple configurations with minimum technical intervention[3] |
| System type | — | plasma etch system[6] |
| Supported components | — | MEMS and 3D-IC components[3] |
| Control capability | — | very high aspect ratio trench etch and profile control[6] |
| Physical description | — | compact[3] |
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