Comparison ledger
ASML PAS5500/80, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PAS5500/80ASML | 150 e MaskSUSS MicroTec |
|---|---|---|
| OEM | ASML | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | 500nm | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML PAS5500/80 | SUSS MicroTec 150 e Mask |
| Specifications | ||
| Equipment type | ASML Stepper[1] | — |
| Resolution | down to 500 nm[1] | — |
| Function | Automatic alignment and exposure of photoresist films[2] | — |
| Wavelength | 365 nm[2] | — |
| Stage repeatability | 8 nm[2] | — |
| Overlay | 45 nm[2] | — |
| Minimum exposure dose | 40 mJ/cm2[2] | — |
| Intensity | 400 mW/cm2[2] | — |
| Uniformity | <±2%[2] | — |
| Standard substrates | 4 inch (100 mm) wafers[2] | — |
| Technically configurable wafer sizes | 6 inch (150 mm) and 8 inch (200 mm) wafers[2] | — |
| Substrate thickness range | 300 µm – 1000 µm[2] | — |
| Reticle material | Ultra-low thermal expansion quartz[2] | — |
| Nominal reticle size | 6 x 6 inch (152.40 x 152.40 mm)[2] | — |
| Default reticle thickness | 0.120 inch (3.05 mm)[2] | — |
| Throughput | > 95 wafers/hour on 100 mm diameter wafers[2] | — |
| Batch streaming | Load and unload cassettes with 25 wafers at a time[2] | — |
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