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Comparison ledger

NV GSD A 80versus0216 7696, E 11368072 ESC

Axcelis NV GSD A 80, Varian 0216 7696, E 11368072 ESC, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
OEMAxcelisVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis NV GSD A 80Varian 0216 7696, E 11368072 ESC
Specifications
Phase3 Phase[1]—
Power30 KVA[1]—
Voltage200 V[2]—
Frequency50 Hz[2]—
GasBF3, ASH3, AR[1]—
ConfigurationPumps:[1]Platen ADV-S Type[4]
P1Turbo Pump Mitsubishi PT 1500[1]—
P2Cyro Pump Suzuki-Syokan A200[1]—
P3Cryo Pump Suzuki-Syokan A300[1]—
RP1Dry Pump Ebara A07V[1]—
RP2Dry Pump Ebara A30V[1]—
RP3Alcatel Drytel34[1]—
ManufacturerAxcelis[1]—
ModelNV GSD A 80[1]—
Equipment typeIon implanter[3]—
Wafer size8 inch[1]—
Power rating30 KVA[1]—
Gas deliveryBF3, ASH3, AR[1]—
Pump P1Turbo Pump Mitsubishi PT 1500[1]—
Pump P2Cyro Pump Suzuki-Syokan A200[1]—
Pump P3Cryo Pump Suzuki-Syokan A300[1]—
Pump RP1Dry Pump Ebara A07V[1]—
Pump RP2Dry Pump Ebara A30V[1]—
Pump RP3Alcatel Drytel34[1]—
Type—ESC Platen ADV-S Type[4]
Category—Ion Implantation[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]waferpedia.comwaferpedia.com
  3. [3]waferpedia.comwaferpedia.com
  4. [4]inventory listing
  5. [5]waferpedia.comwaferpedia.com