Comparison ledger
Axcelis NV GSD VHE, Varian 160 XP Ion, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NV GSD VHEAxcelis | 160 XP IonVarian |
|---|---|---|
| OEM | Axcelis | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | Wafer tilt | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD VHE | Varian 160 XP Ion |
| Specifications | ||
| Wheel type | Full disk 17 wafers[1] | — |
| Wafer size | Wafer tilt[1] | — |
| Source | Bernas[1] | — |
| Extraction system | Triple axes[1] | — |
| Gases | Arsenic, Boron, Phosphine (SDS), all bottles removed. There is also present plumbing for one Xe bottle.[1] | — |
| Configuration | SDS Gas box[1] | 150mm High Current IMP[4] |
| Max implantation energy (in KeV) | 4.2 MeV (14 resonator configuration).[1] | — |
| Max Extraction voltage (in KeV) | 90[1] | — |
| Orienter type | flat[1] | — |
| Hydrogen implantation available | no[1] | — |
| PFS | HD[1] | — |
| Software version | 5.6[2] | — |
| Manufacturer | Axcelis[3] | — |
| Model | NV GSD VHE[3] | 160 XP Ion[5] |
| Category | Ion Implantation[3] | Ion Implantation[4] |
| Wafer size / handling | Wafer tilt[3] | — |
| Max implantation energy | 4.2 MeV (14 resonator configuration)[1] | — |
| Max extraction voltage | 90 keV[3] | — |
| High current | For High Current[2] | — |
| Vintage | 2001 Vintage[2] | — |
| Wafer handling | wafer tilt[3] | — |
| Software platform | Sun SparcStation5 with O/S V 3.8.3[1] | — |
| OEM | — | Varian[5] |
| Tool type | — | ion implanter[4] |
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