Axcelis

Wafer size
Wafer tilt
Power
90[1]
Performance
Source extraction alignment jig[1]
Gas delivery
SDS Gas box[1]
Optics
Beamline column[1]
The Axcelis NV GSD VHE is an ion implantation tool.[3]
Ion implantation belongs in the dopant introduction step of semiconductor fabrication after patterning defines where dopants should enter the wafer.
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
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The maximum implantation energy is 4.2 MeV in the 14-resonator configuration.[1][3]
The following facts about the NV GSD VHE are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the NV GSD VHE are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the NV GSD VHE are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the NV GSD VHE are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the NV GSD VHE are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the NV GSD VHE is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Last updated Oct 13, 2026.
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The Varian 160 XP Ion is an ion implantation tool configured as a 150mm high-current implanter.