Comparison ledger
Bruce BDF 41 Diffusion and Tokyo Electron Alpha 8 SE, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | BDF 41 DiffusionBruce | Alpha 8 SETokyo Electron |
|---|---|---|
| OEM | Bruce | Tokyo Electron |
| Category | Thermal / Diffusion | Thermal / Diffusion |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Bruce BDF 41 Diffusion | Tokyo Electron Alpha |
| Specifications | ||
| Configuration | 5 zone heating elements[2] | 50/60 HZ[1] |
| Tube Level 4 – Annealing in N2 and H2 | N2[2] | — |
| Process | — | High Temp Oxide (HCL, Ar)[1] |
| Power | — | 4.0 kVA[1] |
| Maximum Full Load Current | — | 40 A[1] |
| Power AC | — | 100 V[1] |
| Overcurrent / Shortcircuit | — | 40 A[1] |
| Voltage | — | 208 V[8] |
| Phase | — | 3 Phase[8] |
| Software Version | — | 3.01 Rev. 003[8] |
| Handler System | — | Wafer Transfer Robot[8] |
| Main System | — | Well Drive[8] |
| Factory Interface | — | SMIF[8] |
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