Comparison ledger
Canon FPA 3000 iW, Nikon NSR-2205i11D, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | FPA 3000 iWCanon | NSR-2205i11DNikon |
|---|---|---|
| OEM | Canon | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | 0.35 micron |
| Introduced | — | — |
| Production run | — | 1995– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Canon FPA 3000 | Nikon NSR-2205i11D |
| Cited variants |
| — |
| Specifications | ||
| Voltage | 200V[3] | — |
| Configuration | 50/60 Hz[4] | — |
| Phase | 3 Phase[3] | — |
| Power | 29kVA[4] | — |
| Make | Canon[4] | — |
| Model | FPA 3000 iW[4] | NSR-2205i11D[1] |
| Category | Lithography[3] | — |
| Equipment type | Stepter[4] | Step-and-repeat system[1] |
| Frequency | 50/60 Hz[3] | — |
| Chamber | Rasco TBW-CD-83iW Compact Chamber[4] | — |
| Reticle size | 6" square t=0.25"[5] | 6 Inch[7] |
| Reticle material | Quartz[5] | — |
| Pattern material | 2 layer Cr, 3 layer Cr[5] | — |
| Pellicle frame | Pattern side only[5] | — |
| Wafer size | 4" thru 8" SEMI Standard, JEIDA, Notch / Flat[5] | 8 Inch[7] |
| Projection magnification | 1/2 X[5] | — |
| Numerical aperture | 0.24[5] | — |
| Field size | 50X50mm[5] | — |
| Exposure light | i-line (365nm)[5] | — |
| Light source | 2.0KW Super High Pressure Hg Lamp[5] | — |
| Intensity | 2500 W/m 2[5] | — |
| Uniformity | < 1.5%[5] | — |
| Resolution | <0.8µm[5] | 0.35 micron[1] |
| Depth of focus | >4.0µm (0.8µm L&S)[5] | — |
| Image field deviation | <2.5µm[5] | — |
| Distortion | <±0.11µm[5] | — |
| Reticle rotation accuracy | <±0.02µm on wafer[5] | — |
| Reticle rotation repeatability | <0.05µm on wafer[5] | — |
| Wafer alignment | <0.10µm mean + 3sigma[5] | — |
| Focus repeatability | <0.10µm (3sigma)[5] | — |
| Leveling repeatability | <7ppm (3sigma)[5] | — |
| Minimum compensation range | >100ppm[5] | — |
| Step accuracy | <0.05µm (3sigma)[5] | — |
| Scaling | <±1.0ppm[5] | — |
| Orthogonality | <±1.0ppm[5] | — |
| Throughput | >120 wafers/hour Φ6", 50mm, 9 shots; >115 wafers/hour Φ8", 50mm, 14 shots[5] | — |
| Rasco chamber | TBW-CD-83iW Compact Chamber[4] | — |
| Tool type | — | Step-and-Repeat System[1] |
| Process node | — | 0.35 micron[1] |
| Node | — | 0.35 micron[1] |
| Technology Node | — | 0.35 micron[1] |
| Type | — | Step-and-repeat system[1] |
| Resolution node | — | 0.35 micron[1] |
| Machine type | — | Step-and-Repeat System[1] |
| Target design node | — | 0.35 micron[1] |
| System type | — | Step-and-repeat system[1] |
| Target node | — | 0.35 micron[1] |
| Design node | — | 0.35 micron[1] |
| Node (resolution) | — | 0.35 micron[1] |
| Minimum feature size | — | 0.35 μm[1] |
| Design Rule | — | 0.35 micron[1] |
| Feature Size | — | 0.35 micron[1] |
| Description | — | State-of-the-art workhorse[1] |
| Manufacturer | — | Nikon[1] |
| OEM | — | Nikon[1] |
| Described use | — | Step-and-Repeat System[1] |
| NA | — | 0.63[6] |
| Exposure source | — | i-line (365 nm wavelength)[6] |
| Reduction ratio | — | 1:5[6] |
| Maximum exposure field | — | 22 mm × 22 mm[6] |
| Overlay accuracy | — | ≤ 70 nm (EGA, |M| + 3σ)[6] |
| Alignment system | — | LSA (standard), FIA (optional), LIA (optional)[6] |
| Date of manufacture | — | 01 Sep 1995[7] |
| Serial number | — | 1105183[7] |
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