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Comparison ledger

200 Spinversus1 EC 101 R 485 Photoresist Spinner

CEE 200 Spin, Headway 1 EC 101 R 485 Photoresist Spinner, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
OEMCEEHeadway
CategoryResist ProcessingResist Processing
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 200Headway 1 EC 101 R 485 Photoresist Spinner
Specifications
Phase1 Phase[1]—
TypeSpin Coater[1]—
Model200[1]—
MakeCEE[1]—
Wafer Sizes8 inch[1]—
Configuration1 Phase[1]—
Equipment typeSpin Coater[1]—
Spin speed5000 rpm[2]—
Substrate supportFlat substrates up to 200 mm or fragments[2]—
Substrate thickness max12 mm[2]—
Coating thicknessUniform coating thickness up to 100 µm[2]—
Vacuum requirement—23" Hg[3]
Electrical—115 V, 3 A, 50/60 Hz, 1 Ø (single phase)[3]
Electrical power—115 V, 3 A, 50/60 Hz, 1 Ø (single phase)[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]amolf.nlamolf.nl
  3. [3]inventory listing