Waferpedia

Comparison ledger

200 SpinversusWS-650-23 B Spin

CEE 200 Spin, Laurell WS-650-23 B Spin, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
OEMCEELaurell
CategoryResist ProcessingResist Processing
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 200Laurell WS-650-23 B Spin
Specifications
Phase1 Phase[1]—
TypeSpin Coater[1]—
Model200[1]—
MakeCEE[1]—
Wafer Sizes8 inch[1]—
Configuration1 Phase[1]—
Equipment typeSpin Coater[1]—
Spin speed5000 rpm[2]—
Substrate supportFlat substrates up to 200 mm or fragments[2]—
Substrate thickness max12 mm[2]—
Coating thicknessUniform coating thickness up to 100 µm[2]—
Maximum Substrate Size—ø150 mm wafers; 5" × 5" (127 mm × 127 mm) substrates[3]
Maximum Rotational Speed—12,000 RPM (based on a ø100 mm silicon wafer)[3]
Process Controller—650-series microprocessor controller with PC software support (Spin 3000); real-time interaction, pausing, stopping, and continuation[3]
Power Requirements—95 to 240 VAC, 47/63 Hz, ~300 W[3]
Vacuum Requirements—25–28 inHg (635–711 mm Hg) with flow 4.5 SCFM (0.127 m³/min) at 0 inHg[3]
Nitrogen Purge Pressure—60–70 PSIG (4–5 bar) of N₂ or CDA; consumption 3 ft³/h (0.085 m³/h) for standard motor, 20 ft³/h (0.566 m³/h) for high-performance motor[3]
Housing Material—Solid co-polymer blend (proprietary); optional PTFE (Hostaflon TFM-1600 / Teflon AF) for high-temperature chemistry[3]
Safety Certifications—ETL, UL, CSA, CE, RoHS compliant; door interlock, vacuum interlock, lid interlock[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]amolf.nlamolf.nl
  3. [3]laurell.comlaurell.com