Waferpedia

Comparison ledger

200 Spinversus80 B

CEE 200 Spin, SCREEN 80 B, side by side. Every value shown is drawn from the cited encyclopedia entries.

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Side-by-side comparison of selected equipment models
Attribute
80 BSCREEN
OEMCEESCREEN
CategoryResist ProcessingResist Processing
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCEE 200SCREEN SK 80
Specifications
Phase1 Phase[1]—
TypeSpin Coater[1]—
Model200[1]80 B[3]
MakeCEE[1]SCREEN / DNS[3]
Wafer Sizes8 inch[1]—
Configuration1 Phase[1]Main body[3]
Equipment typeSpin Coater[1]Coater / Developer[3]
Spin speed5000 rpm[2]—
Substrate supportFlat substrates up to 200 mm or fragments[2]—
Substrate thickness max12 mm[2]—
Coating thicknessUniform coating thickness up to 100 µm[2]—
Included items—Main body; accessory equipment; AC unit and ETU; support cabinet and power[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]amolf.nlamolf.nl
  3. [3]inventory listing