Comparison ledger
Denton Vacuum 635 and Denton Vacuum 635LL, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | 635Denton Vacuum | 635LLDenton Vacuum |
|---|---|---|
| OEM | Denton Vacuum | Denton Vacuum |
| Category | Deposition | Deposition |
| Wafer size | 8" | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Denton Vacuum 635 | Denton Vacuum 635LL |
| Specifications | ||
| OEM | Denton Vacuum[1] | — |
| Model | 635[1] | — |
| Tool type | Deposition[2] | — |
| Process capabilities | Four confocal cathodes, inclined 25 degrees off vertical[1] | — |
| Standard targets | 4" Au, 4" Cr, 3" Pt, 3" Ti[1] | — |
| Film thickness range | From a few nm to hundreds of nm[1] | — |
| Sputter power supplies | DC1 pulse or DC, DC2, RF1[1] | — |
| Cathode switching | Switch-control any supply to any cathode[1] | — |
| Co-sputter capability | Yes[1] | — |
| Substrate pre-clean | RF2 supply[1] | — |
| Reactive sputtering | Nitrogen or oxygen[1] | — |
| Stage diameter | 8 inch[1] | — |
| Substrate rotation | +/- 5% uniformity[1] | — |
| Chamber base pressure | 2 x 10^-7 Torr in 12 hours[1] | — |
| Substrate heating | Up to 500 C[1] | — |
| Liftoff deposition | With water-cooled stage[1] | — |
| Argon pressure range | < 1-90 mT[1] | — |
| APC / MFC controller | 100 sccm MFC controller[1] | — |
| Cathodes | — | 4-cathodes[3] |
| Gas / process feedback | — | RGA, OES-feedback reactive oxygen or nitrogen sputter[3] |
| Chuck temperature | — | heated/cooled chuck to 500C[3] |
| Process mode | — | co-sputtering[3] |
| Substrate size | — | coats up to 200mm diameter substrates[3] |
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