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Comparison ledger

635 versus EE-4

Denton Vacuum 635 and Denton Vacuum EE-4, side by side. Every value shown is drawn from its cited encyclopedia entry.

Side-by-side comparison of selected equipment models
Attribute
635Denton Vacuum
EE-4Denton Vacuum
OEMDenton VacuumDenton Vacuum
CategoryDepositionDeposition
Wafer size8"3"
Process node
Introduced
Production run
Lifecycle
Lifecycle milestones
Control system
Generation
FamilyDenton Vacuum 635Denton Vacuum EE-4
Specifications
OEMDenton Vacuum[1]Denton Vacuum[3]
Model635[1]EE-4[3]
Tool typeDeposition[2]Electron beam deposition tool[3]
Process capabilitiesFour confocal cathodes, inclined 25 degrees off vertical[1]
Standard targets4" Au, 4" Cr, 3" Pt, 3" Ti[1]
Film thickness rangeFrom a few nm to hundreds of nm[1]
Sputter power suppliesDC1 pulse or DC, DC2, RF1[1]
Cathode switchingSwitch-control any supply to any cathode[1]
Co-sputter capabilityYes[1]
Substrate pre-cleanRF2 supply[1]
Reactive sputteringNitrogen or oxygen[1]
Stage diameter8 inch[1]
Substrate rotation+/- 5% uniformity[1]
Chamber base pressure2 x 10^-7 Torr in 12 hours[1]
Substrate heatingUp to 500 C[1]
Liftoff depositionWith water-cooled stage[1]
Argon pressure range< 1-90 mT[1]
APC / MFC controller100 sccm MFC controller[1]
Hearth positions6-position hearth[3]
Vacuum environmenton the order of e-7 torr[3]
Chamber designDual chamber design[3]
AutomationDepositions and pump-down/venting sequences are automated using an onboard PLC[3]
Substrate handlingRotating substrate holders[3]
Available materialsAu, Pt, Ag, Ti, Cr, Pd[3]
FacilityNanofabrication Facility[3]
LocationLISE Cleanroom G07[3]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu
  2. [2]nanofab.utah.edunanofab.utah.edu
  3. [3]cns1.rc.fas.harvard.educns1.rc.fas.harvard.edu