Comparison ledger
Disco DAG810 and Disco DFD 6240 Automatic Dicing, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | DAG810Disco | |
|---|---|---|
| OEM | Disco | Disco |
| Category | Dicing & Grinding | Dicing & Grinding |
| Wafer size | 4" | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Disco DAG810 | Disco DFD |
| Specifications | ||
| Equipment type | compact, automatic grinder[1] | — |
| Materials | silicon, III/V materials (GaN, GaAs, InP), and various glass types (pure amorphous SiO2, float glass, pyrex)[1] | — |
| Wafer sizes supported by universal vacuum chuck table | 4", 5", 6", and 8"[1] | — |
| Mechanical frame use | for UV-tape mounted wafers or chips[1] | — |
| Spindle | high-rigidity, low-vibration spindle[1] | — |
| Grinding wheels | dedicated wheels for coarse and fine silicon grinding, coarse and fine glass grinding, and GaN fine grinding[1] | — |
| Probe-height | real-time probe-height from 4" wafer size[1] | — |
| User interface | LCD touch screen[1] | — |
| Grinding speed | as high as 30 microns/min[1] | — |
| Thickness variation | total thickness variation close to one micron[1] | — |
| Surface roughness | less than 100 nm[1] | — |
| Configuration | — | Single Spindle (1.2KW)[2] |
| Phase | — | 3 Phase[2] |
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