Comparison ledger
Disco DAG810 and Disco KR15, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | DAG810Disco | KR15Disco |
|---|---|---|
| OEM | Disco | Disco |
| Category | Dicing & Grinding | Dicing & Grinding |
| Wafer size | 4" | 8" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Disco DAG810 | Disco KR15 |
| Cited variants | — |
|
| Specifications | ||
| Equipment type | compact, automatic grinder[2] | — |
| Materials | silicon, III/V materials (GaN, GaAs, InP), and various glass types (pure amorphous SiO2, float glass, pyrex)[2] | — |
| Wafer sizes supported by universal vacuum chuck table | 4", 5", 6", and 8"[2] | — |
| Mechanical frame use | for UV-tape mounted wafers or chips[2] | — |
| Spindle | high-rigidity, low-vibration spindle[2] | — |
| Grinding wheels | dedicated wheels for coarse and fine silicon grinding, coarse and fine glass grinding, and GaN fine grinding[2] | — |
| Probe-height | real-time probe-height from 4" wafer size[2] | — |
| User interface | LCD touch screen[2] | — |
| Grinding speed | as high as 30 microns/min[2] | — |
| Thickness variation | total thickness variation close to one micron[2] | — |
| Surface roughness | less than 100 nm[2] | — |
| Blade designation | — | Disco KR15[3] |
| Blade thickness | — | 200 micron[3] |
| Blade grit | — | low grit[3] |
| Intended materials | — | sapphire, glass, and silicon[3] |
| Max. workpiece size | — | Φ8"[3] |
| Thickness | — | 200 micron[3] |
| Grit | — | Low grit[3] |
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