Comparison ledger
ESI 5330, Logitech 1 WBS 1 Wafer Substrate, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 5330ESI | 1 WBS 1 Wafer SubstrateLogitech |
|---|---|---|
| OEM | ESI | Logitech |
| Category | Packaging & Bonding | Packaging & Bonding |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ESI 5330 | Logitech 1 WBS 1 Wafer Substrate |
| Specifications | ||
| Rep Rate Range (kHz) | 30-70[1] | — |
| Max Work Surface Power (W) | 6.1[1] | — |
| Pulse Width (ns) | 80 @30kHz, 140 @70kHz[1] | — |
| Rep Rate Range | 30-70 kHz[1] | — |
| Max Work Surface Power | 6.1 W[1] | — |
| Pulse Width | 80 ns @ 30 kHz, 140 ns @ 70 kHz[1] | — |
| Year | 2004 vintage[1] | — |
| Laser Type | High power diode pumped, repetitively Q-switched Nd:YAG[2] | — |
| Wavelength | 355 nm[2] | — |
| Operating Mode | TEM oo (gaussian power distribution across the beam)[2] | — |
| Panel Size | 21 in x 25 in (533 mm x 635 mm)[2] | — |
| Resolution | < 0.00004 in (1 μm)[2] | — |
| Accuracy | ± 0.0008 in (± 20 μm)[2] | — |
| Model | 5330[1] | — |
| Make | ESI[1] | — |
| Device type | Laser[1] | — |
| Product type | UV Laser μVia Drill[2] | — |
| Application | High-quality microvias in small-geometry circuit boards and electronic packages[2] | — |
| Pulse repetition frequency | Up to 70 kHz[2] | — |
| Average power at work surface | > 5.7 W @ 30 kHz[2] | — |
| Pulsewidth | 60 nsec typical[2] | — |
| Panel size | 21” x 25” (533 mm x 635 mm)[2] | — |
| Control operating system | Real-time UNIX (LynxOS)[2] | — |
| Laser beam positioning type | Cross-axis with galvanometer[2] | — |
| Wafer Size | — | 6 inch[3] |
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