Waferpedia

Comparison ledger

6200 Mask versus EVG 150

EV Group 6200 Mask and EV Group EVG 150, side by side. Every value shown is drawn from its cited encyclopedia entry.

Side-by-side comparison of selected equipment models
Attribute
6200 MaskEV Group
EVG 150EV Group
OEMEV GroupEV Group
CategoryLithographyLithography
Wafer size100mm
Process node
Introduced
Production run
Lifecycle
Lifecycle milestones
Control system
Generationi-line
FamilyEV Group 6200EV Group EVG 150
Specifications
Configuration3 Stations:[1]
Power1000W light source[1]
Tool typeModular cluster tool for coating and development of i-line photoresists[2]
Loading/unloading portsTwo loading/unloading ports: one cassette for coating and one cassette for development[2]
Wafer centeringOptical wafer centering station[2]
Spin-coating modulesThree spin-coating modules: coater A, coater B, and coater C[2]
Coater A useLow-viscosity photoresist[2]
Coater B useHigh-viscosity photoresist[2]
Coater C useBottom layers[2]
Development moduleOne development module with puddle and spray options[2]
Hotplates and coolplatesThree stacks of hotplates (8 in total) and coolplates (3 in total)[2]
HMDS primingAdditional HMDS-priming module[2]
RobotDual end effector robot[2]
Wafer handlingStandard SEMI-wafers of 100 mm and 150 mm diameter[2]
Substrate typesOpaque wafers (silicon, SOI) or transparent wafers (glass, fused-silica, sapphire)[2]
Process stability featuresAirborne molecular contamination (AMC) filter and active control of chamber and resist/developer lines temperature[2]
Available photoresistsAZ ECI 3007, AZ ECI 3027, AZ 1512 HS, AZ nLOF 2020, AZ nLOF 2070, MC PC62E[2]
Available bottom layersLOR 5A, LOR 15C, XHRiC-16 II[2]
Surface preparation optionsHMDS, dehydrate, or none[2]
Solvent clean optionsStandard or edge bead removal (EBR)[2]
Developer chemistriesAZ 726 MIF, AZ 400K 1:3.5, AZ developer III[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]epfl.chepfl.ch