Comparison ledger
GCA 6100 C Wafer and GCA 6300 DSW, side by side. Every value shown is drawn from its cited encyclopedia entry.
| Attribute | 6100 C WaferGCA | 6300 DSWGCA |
|---|---|---|
| OEM | GCA | GCA |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 150mm |
| Process node | — | 5X g-line wafer stepper |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | g-line |
| Family | GCA 6100 C Wafer | GCA 6300 DSW |
| Cited variants | — | |
| Specifications | ||
| Configuration | Maximus 1000 Light Source (350w)[3] | — |
| Wafer size | 100 mm AWH1 (Automatic Wafer Handler)[3] | — |
| Lens | 10X g-line (436), NA=0.28[3] | Zeiss lens with 0.30 numerical aperture[1] |
| Equipment Rack | (Top Down)[3] | — |
| Tool type | — | 5X g-line wafer stepper[1] |
| Exposure wavelength | — | g-line (436 nm)[1] |
| Numerical aperture | — | 0.30 NA[1] |
| Reduction ratio | — | 5:1[1] |
| Variable field size | — | up to 15 mm square[1] |
| Minimum feature size | — | <0.9 µm[1] |
| Wafer accommodation | — | 3" up to 150 mm; smaller pieces[1] |
| Registered alignment | — | <0.25 µm[1] |
| Mask size | — | 5" x 0.090"-thick masks[1] |
| Step and repeat exposure system | — | laser-controlled stage motion[1] |
| Maximum die size | — | ~15 mm x 15 mm[2] |
| Minimum substrate size | — | ~10 x 10 mm[2] |
| Mask plates | — | 5x5x0.090 inches[2] |
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