Waferpedia

GCA

6300 DSW

Lithography150mm5X g-line wafer stepperg-lineGCA 6300 DSW family
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The GCA 6300 DSW is a step-and-repeat photolithography wafer stepper. The GCA 6300 DSW uses a 5:1 reduction lens and can be configured with either a g-line (436 nm) or i-line (365 nm) exposure wavelength.[1][2]

6300 DSW — cnfusers.cornell.edu
Fig. 016300 DSWcnfusers.cornell.edu[1]

Wafer size

150mm

Node / era

5X g-line wafer stepper

Performance

<0.25 µm[1]

Optics

g-line (436 nm)[1]

What it is

General reference — not yet source-verified

A wafer stepper is a projection lithography tool used to transfer reticle patterns into photoresist on a substrate. A wafer stepper sits in the lithography module of a process flow and is used when patterned layers require optical reduction imaging, field by field exposure, and overlay to earlier layers.

How it works

The GCA 6300 DSW projection printer uses a g-line lens column with 0.30 numerical aperture to provide 5:1 reduction. The GCA 6300 DSW is a step and repeat exposure system with laser-controlled stage motion. The GCA 6300 DSW has programmable die number and die placement. The GCA 6300 DSW can be converted to function as a GCA 3696 photorepeater system for exposing photoresist coated glass plates up to 7 inches.[1]

Where it fits in the process flow

General reference — not yet source-verified

Photolithography with a wafer stepper is performed after a substrate has been prepared with a film stack and coated with photoresist. Stepper exposure is followed by resist development and then by pattern transfer or material processing such as etch, implantation, plating, or liftoff, depending on the layer being built.

Applications

The GCA 6300 DSW is used for lithography on wafers and smaller pieces. The GCA 6300 DSW supports programmable placement of dies across the substrate. The GCA 6300 DSW can also be configured in photorepeater mode for exposing photoresist coated glass plates up to 7 inches.[1][4]

  • photolithography
  • step and repeat exposure
  • high-resolution lithography
  • critical alignment

What do the numbers mean?

Wafer handling12

Tool type
5X g-line wafer stepper[1]
Accurate?
Wafer accommodation
3" up to 150 mm; smaller pieces[1]
Accurate?
Tool type
i-line wafer stepper[2]
Accurate?
Minimum substrate size
~10 x 10 mm[2]
Accurate?
Wafer size
3" to 150 mm (g-line)[1]
Accurate?
Wafer size
up to 6" diameter (i-line)[2]
Accurate?
Minimum substrate size
~10 x 10 mm (i-line)[2]
Accurate?
Intensity at wafer
~180 mW/cm² (i-line)[2]
Accurate?
Tool type
G-line wafer stepper[1]
Accurate?
Wafer size
3" up to 150mm[1]
Accurate?
Tool type
Lithography wafer stepper[1]
Accurate?
Wafer size
150mm[3]
Accurate?

Optics & imaging22

Exposure wavelength
g-line (436 nm)[1]
Accurate?
Numerical aperture
0.30 NA[1]
Accurate?
Mask size
5" x 0.090"-thick masks[1]
Accurate?
Step and repeat exposure system
laser-controlled stage motion[1]
Accurate?
Lens
Zeiss lens with 0.30 numerical aperture[1]
Accurate?
Exposure wavelength
i-line (365 nm)[2]
Accurate?
Lens
Olympus 2142; NA = 0.42[2]
Accurate?
Mask plates
5x5x0.090 inches[2]
Accurate?
Exposure wavelength
436 nm (g-line)[1]
Accurate?
Exposure wavelength
365 nm (i-line)[2]
Accurate?
Lens manufacturer
Zeiss (g-line) / Olympus (i-line)[2]
Accurate?
Lens numerical aperture
0.30 (g-line)[1]
Accurate?
Lens numerical aperture
0.42 (i-line, Olympus 2142)[2]
Accurate?
Resolution
<0.9 µm (g-line)[1]
Accurate?
Resolution
500 nm over portion of field; 700 nm over entire field (i-line)[2]
Accurate?
Mask size
5" x 0.090" thick[1]
Accurate?
Mask size
5x5x0.090 inches[2]
Accurate?
Stage system
laser-controlled stage motion (g-line)[1]
Accurate?
Stage system
stepper motors and laser interferometers (i-line)[2]
Accurate?
Exposure type
step and repeat[1]
Accurate?
Lens
Olympus 2142[2]
Accurate?
Numerical aperture
0.42[2]
Accurate?

Performance5

Registered alignment
<0.25 µm[1]
Accurate?
Alignment accuracy
typically <0.25 µm (g-line)[1]
Accurate?
Registered alignment
typically <0.25µm[1]
Accurate?
Alignment
Registered alignment is typically <0.25µm[1]
Accurate?
Registration tolerance
Max 0.30 um global alignment; Max 0.15 um local alignment[2]
Accurate?

Dimensions & facilities1

Depth of field
1.2 µm for 0.7 µm process (i-line)[2]
Accurate?

Configuration & options14

Reduction ratio
5:1[1]
Accurate?
Variable field size
up to 15 mm square[1]
Accurate?
Minimum feature size
<0.9 µm[1]
Accurate?
Reduction ratio
5x[2]
Accurate?
Maximum die size
~15 mm x 15 mm[2]
Accurate?
Field size
up to 15 mm square (g-line)[1]
Accurate?
Maximum die size
~15 mm x 15 mm (i-line)[2]
Accurate?
Registration tolerance (global)
max 0.30 µm (i-line)[2]
Accurate?
Registration tolerance (local, DFAS)
max 0.15 µm (i-line)[2]
Accurate?
Light source
350 W Hg arc lamp (i-line)[2]
Accurate?
Autofocus
yes (i-line)[2]
Accurate?
Reduction
5:1[1]
Accurate?
Reduction
5x[2]
Accurate?
Field size
up to 15mm square[1]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
GCA 6300 DSW 5X g-line Wafer Stepperg-line—Described as a 5X g-line wafer stepper.cnfusers.cornell.edu[1]
GCA 6300 I-Line Wafer Stepperi-line—Described as an i-line wafer stepper with manual wafer loading and up to 6-inch wafers.wiki.nanofab.ucsb.edu[2]
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Where are the manuals?

Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What exposure wavelength does the GCA 6300 DSW 5X g-line version use?

The GCA 6300 DSW 5X g-line version uses g-line exposure at 436 nm.[1]

What masks does the GCA 6300 DSW use?

The GCA 6300 DSW uses 5 inch by 0.090 inch thick masks.[1]

Not publicly documented

The following facts about the 6300 DSW are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 6300 DSW are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the 6300 DSW are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 6300 DSW are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • No publicly documented compatible parts, consumables, or accessories for the 6300 DSW are on record.

    Answerable by: an OEM parts catalog or a service engineer

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (4)Every fact above is drawn from these public sources
  1. [1]cnfusers.cornell.edu — cnfusers.cornell.educnfusers.cornell.edu
  2. [2]wiki.nanofab.ucsb.edu — wiki.nanofab.ucsb.eduwiki.nanofab.ucsb.edu
  3. [3]waferpedia.comwaferpedia.com
  4. [4]https://www.cnfusers.cornell.edu/sites/default/files/Equipment-Resources/GCA%20Stepper%20Manual_GB.pdf — cnfusers.cornell.educnfusers.cornell.edu
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Last updated Oct 21, 2026.

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